| PART |
Description |
Maker |
| MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 250 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MMDF5N02Z |
DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MMDF4N01HD ON2192 |
From old datasheet system
DUAL TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS
|
Motorola, Inc
|
| MMDF3N03HD ON2180 |
From old datasheet system
DUAL TMOS POWER MOSFET 4.1 AMPERES 30 VOLTS
|
MOTOROLA[Motorola, Inc]
|
| MMDF3N02HD ON2178 |
From old datasheet system
DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS
|
MOTOROLA[Motorola, Inc]
|
| MMDF2N05ZR2_D MMDF2N05ZR2 ON2162 ON2161 |
From old datasheet system
DUAL TMOS POWER MOSFET 2.0 AMPERES 50 VOLTS
Medium Power Surface Mount Products
CONNECTOR ACCESSORY
|
MOTOROLA[Motorola, Inc]
ON Semi
Motorola, Inc.
|
| MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D |
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培RDS（on）\u003d 0.080欧姆
From old datasheet system
TMOS V Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| MTV10N100E_D ON2669 MTV10N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 1000 VOLTS
|
ON Semiconductor
|
| MMFT3055ET1 MMFT3055ET3 |
N-Channel TMOS E-FET Power MOSFET
|
ON Semiconductor
|
| MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G |
TMOS Power FET
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
|
ONSEMI[ON Semiconductor]
|
